| Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
PBYR640CT Datasheet(PDF) 2 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
PBYR640CT Datasheet(HTML) 2 Page - NXP Semiconductors |
|
2 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR645CT series Schottky barrier ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 5 A; Tj = 125˚C - 0.51 0.6 V I F = 10 A - 0.72 0.87 V I R Reverse current V R = VRWM - 0.12 0.5 mA V R = VRWM; Tj = 100˚C - 10 15 mA C d Junction capacitance V R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 150 - pF May 1998 2 Rev 1.200 |
|
|
Enlace URL |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Enlace a la hoja de datos | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |