Philips Semiconductors

Product specification

Rectifier diodes

PBYR645CT series

Schottky barrier

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

V

• Reverse surge capability

• High thermal cycling performance

I

• Low thermal resistance

V

GENERAL DESCRIPTION

PINNING

SOT82

Dual, common cathode schottky

PIN

DESCRIPTION

rectifier

diodes

in

a

plastic

envelope. Intended for use as

1

anode 1

output rectifiers in low voltage, high

frequency switched mode power

2

cathode

supplies.

3

anode 2

The PBYR645CT series is supplied

in the conventional leaded SOT82

tab

cathode

package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

PBYR6

35CT 40CT 45CT

V

RRM

Peak repetitive reverse

-

35

40

45

V

voltage

V

RWM

Working peak reverse

-

35

40

45

V

voltage

V

R

Continuous reverse voltage

T

-

35

40

45

V

I

O(AV)

Average rectified output

square wave;

δ = 0.5; T

-

10

A

current (both diodes

conducting)

I

FRM

Repetitive peak forward

square wave;

δ = 0.5; T

-

10

A

current per diode

I

FSM

Non-repetitive peak forward

t = 10 ms

-

75

A

current diode

t = 8.3 ms

-

82

A

sinusoidal; T

surge; with reapplied V

RRM(max)

I

RRM

Peak repetitive reverse

pulse width and repetition rate

-

1

A

surge current per diode

limited by T

j max

T

j

Operating junction

-

150

˚C

temperature

T

stg

Storage temperature

- 65

150

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction

per diode

-

-

5

K/W

to mounting base

both diodes

-

-

4

K/W

R

th j-a

Thermal resistance junction

in free air

-

100

-

K/W

to ambient

k

a1

a2

13

2

1

23

May 1998

1

Rev 1.200