PBYR645CTD datasheet(3/5 Pages) PHILIPS

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Philips Semiconductors

Product specification

Rectifier diodes

PBYR645CTD series

Schottky barrier

Fig.1. Maximum forward dissipation per diode

F = f(IF(AV)); square current waveform where

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation per diode

F = f(IF(AV)); sinusoidal current waveform where

a = form factor = I

F(RMS) / IF(AV).

Fig.3. Typical and maximum forward characteristic

per diode I

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current per diode;

R = f(VR); parameter Tj

Fig.5. Typical junction capacitance per diode;

d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance per diode;

th j-mb = f(tp).

123

0.5

1.5

2.5

0.5

0.2

0.1

PBYR645CTD

Rs = 0.04 Ohms

Vo = 0.48 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

D =

D = 1.0

Tmb(max) / C

150

146

142

138

100mA

10mA

1mA

100uA

10uA

Reverse current, IR (A)

Reverse voltage, VR (V)

50 C

75 C

100 C

125 C

PBYR645CTD

Tj = 25 C

0.5

1.5

2.5

0.5

1.5

2.5

1.9

2.2

2.8

PBYR645CTD

Rs = 0.04 Ohms

Vo = 0.48 V

a = 1.57

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) / C

150

146

142

100

1000

PBYR645CTD

Reverse voltage, VR (V)

Junction capacitance, Cd (pF)

0.2

0.4

0.6

0.8

1.2

1.4

PBYR645CTD

Forward voltage, VR (V)

Forward current, IF (A)

Tj = 25 C

Tj = 125 C

max

typ

0.01

0.1

PBYR645CTD

1us

10us

100us

1ms

10ms

100ms

10s

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

September 1998

Rev 1.100

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