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PBYR645CTD Datasheet(PDF) 2 Page - NXP Semiconductors |
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PBYR645CTD Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR645CTD series Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction per diode - - 4 K/W to mounting base both diodes - - 3.5 K/W R th j-a Thermal resistance junction pcb mounted, minimum footprint, FR4 - 50 - K/W to ambient board ELECTRICAL CHARACTERISTICS All characteristics are per diode at T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 3 A; Tj = 125˚C - 0.55 0.6 V I F = 6 A; Tj = 125˚C - 0.67 0.72 V I F = 6 A - 0.77 0.94 V I R Reverse current V R = VRWM - 0.1 0.4 mA V R = VRWM; Tj = 100˚C - 5 15 mA C d Junction capacitance V R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 96 - pF September 1998 2 Rev 1.100 |
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