PBYR3080WT datasheet(3/5 Pages) PHILIPS

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Philips Semiconductors

Product specification

Rectifier diodes

PBYR30100WT series

Schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV)) per

diode; square current waveform where

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation P

F = f(IF(AV)) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

Fig.3. Typical and maximum forward characteristic

per diode; I

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current per diode;

R = f(VR); parameter Tj

Fig.5. Typical junction capacitance per diode;

d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance per diode;

th j-mb = f(tp).

PBYR30100PT

IF(AV) / A

PF / W

Vo = 0.550 V

Rs = 0.010 Ohms

Tmb(max) / C

150

143

136

129

122

D = 1.0

0.5

0.2

0.1

D =

100

0.1

0.01

IR/ mA

VR/ V

PBYR30100PT

100

Tj/ C = 150

125

100

PBYR30100

IF(AV) / A

PF / W

a = 1.57

1.9

2.2

2.8

Vo = 0.550 V

Rs = 0.010 Ohms

515

150

143

136

129

Tmb(max) / C

100

10000

1000

100

Cd/ pF

VR/ V

PBYR30100PT

VF / V

IF / A

100

0.5

1.5

Tj = 25 C

Tj = 125 C

Typ

Max

1us

10us

100us

1ms

10ms

100ms

10s

0.001

0.01

0.1

PBYR30100WT

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

November 1998

Rev 1.300

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