Philips Semiconductors

Product specification

Rectifier diodes

PBYR30100WT series

Schottky barrier

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

V

• Reverse surge capability

• High thermal cycling performance

I

• Low thermal resistance

V

GENERAL DESCRIPTION

PINNING

SOT429 (TO247)

Schottky rectifier diodes in a plastic

PIN

DESCRIPTION

envelope. Intended for use as

output rectifiers in low voltage, high

1

anode 1

frequency switched mode power

supplies.

2

cathode

The

PBYR30100WT

series

is

3

anode 2

supplied in the conventional leaded

SOT429 (TO247) package.

mounting cathode

base

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

PBYR30

60WT

80WT

100WT

V

RRM

Peak repetitive reverse

-

60

80

100

V

voltage

V

RWM

Working peak reverse

-

60

80

100

V

voltage

V

R

Continuous reverse voltage

T

-

60

80

100

V

I

O(AV)

Average rectified output

square wave;

δ = 0.5;

-

30

A

current (both diodes

T

conducting)

I

FRM

Repetitive peak forward

square wave;

δ = 0.5;

-

30

A

current per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

180

A

current per diode

t = 8.3 ms

-

200

A

sinusoidal; T

surge; with reapplied V

RRM(max)

I

RRM

Peak repetitive reverse

pulse width and repetition rate

-

1

A

surge current per diode

limited by T

j max

T

j

Operating junction

-

150

˚C

temperature

T

stg

Storage temperature

- 65

175

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction

per diode

-

-

1.4

K/W

to mounting base

both diodes

-

-

1

K/W

R

th j-a

Thermal resistance junction

in free air

-

45

-

K/W

to ambient

k

a1

a2

13

2

2

3

1

November 1998

1

Rev 1.300