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IXTK170P10P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza IXTK170P10P
Descripción Electrónicos  P-Channel MOSFET
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXTK170P10P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISF1066
eq IXTK170P10P
P-Channel MOSFET
www.iscsemi.com
1
FEATURES
·Drain Current -ID= -170A@ TC=25℃
·Drain Source Voltage -VDSS= -100V(Min)
·Static Drain-Source On-Resistance
-RDS(on) = 14mΩ(Max)@VGS= 10V
APPLICATIONS
·
motor drive, DC-DC converter, power switch
and solenoid drive.
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-100
V
VGSS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous @Tc=25℃
-170
A
IDM
Drain Current-Single Pulsed
-510
A
PD
Total Dissipation @TC=25℃
890
W
Tch
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.14
℃
/W


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