Technical Data

Data Sheet N2116, Rev. A



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

SSTX304S

TRANSISTOR(Q1)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Collector-base breakdown voltage

VCBO

IC=-10μA, IE=0

-60

V

Emitter-base breakdown voltage

VEBO

IE=-10μA, IC=0

-5

V

Collector cutoff current

ICBO

VCB=-50V, IE=0

-10

nA

DC current gain

hFE

hFE(1) IC=-0.1mA,VCE=-10V*

75

hFE(2) IC=-1mA,VCE=-10V*

100

hFE(3) IC=-10mA,VCE=-10V*

100

hFE(4) IC=-150mA,VCE=-10V*

100

300

hFE(5) IC=-500mA,VCE=-10V*

50

Collector-emitter saturation voltage

VCE(sat)

IC=-150mA,IB=-15mA*

IC=-500mA,IB=-50mA*

-0.4

-1.6

V

Base-emitter saturation soltage

VBE(sat)

IC=-150mA,IB=-15mA*

IC=-500mA,IB=-50mA*

-1.3

-2.6

V

Input Capacitance

Cib

VEB=-2V,IC=0,f=1.0MHZ

17.5

pF

* Measured under pulsed conditions, Pulse width < 300 µs, duty cycle < 2%

DIODE(D1)

COMMON

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging

specification.

Electrical Characteristics @TA=25°C unless otherwise specified

Characteristics

Symbol

Condition

Min.

Typ.

Max.

Units

Forward Voltage Drop

VF1

IF=1mA

0.60

V

IF=10mA

0.72

IF=100mA

0.90

1.2

Characteristics

Symbol

Condition

Min.

Typ.

Max.

Units

Output Voltage

VO

IO=-1mA, IB=0

-60

V

Output Leakage Current

Io(off)

VO=-30V, VEB=-0.5V

-0.5

uA

Output Capacitance

COb

VR=-10V,IE=0,f=1MHZ

8.5

pF

Ordering Information

Device

Package

Shipping

Tape wide

Emboss pitch

SSTX304S

SOT-23

3000 pcs / reel

8mm

4mm