SSTX304S datasheet(1/4 Pages) BURLAND

No. de pieza	SSTX304S

Descripción Electrónicos	SSTX304S PNP General Purpose Amplifier

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Fabricante Electrónico	BURLAND [Burland Technology Solutions]

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Technical Data

Data Sheet N2116, Rev. A



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

SSTX304S

SSTX304S PNP General Purpose Amplifier

TRANSISTOR(Q1)

Characteristic

Symbol

Limits

Unit

Collector-Base Voltage

VCBO

-60

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-0.6

A

DIODE(D1)

Characteristic

Symbol

Limits

Unit

Maximum (peak) Forward Current

IFM

450

mA

Average Forward Current

IO

150

mA

Surge Current (100uS)

IFSM

2

A

COMMON

Characteristic

Symbol

Limits

Unit

Maximum Output (Pin1-Pin3)Voltage

VO

-60

V

Power Dissipation

PC

350

mW

Junction Temperature Range

Tj

150

°C

Storage Temperature Range

Tstg

-55~150

°C

Features

Schematic & Pin Configuration

Mechanical Characteristics

Maximum Ratings@TA=25°C unless otherwise specified



Low saturation Voltage(Transistor)

:VCE(sat)=-0.4V(Max.);IC=-150mA,IB=-15mA

Fast Reverse Recovery Time(Diode)



Capable of 350mWatts of Power Dissipation



Operating and Storage Junction Temperatures: -55℃ to 150℃



Surface Mount SOT-23 Package



RoHS compliant / Green EMC



Collector current: IC=-0.6A

SOT-23



Case: SOT-23, Molded Plastic



Terminals: Plated leads Solderable per MIL-STD-202,

Method 208



Mounting Position: Any

DIODE(D1)

1. EMITTER/CATHODE

2. BASE

3. COLLECTOR/ANODE

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