L160DB70VC datasheet(22/52 Pages) AMD

22 / 52 page

Am29LV160D

May 5, 2006 22358B7

DA TA

SH EET

COMMAND DEFINITIONS

Writing specific address and data commands or se-

quences into the command register initiates device

operations. Table 9 defines the valid register command

sequences. Writing incorrect address and data val-

ues or writing them in the improper sequence resets

the device to reading array data.

All addresses are latched on the falling edge of WE#

or CE#, whichever happens later. All data is latched on

the rising edge of WE# or CE#, whichever happens

first. Refer to the appropriate timing diagrams in the

“AC Characteristics” section.

Reading Array Data

The device is automatically set to reading array data

after device power-up. No commands are required to

retrieve data. The device is also ready to read array

data after completing an Embedded Program or Em-

bedded Erase algorithm.

After the device accepts an Erase Suspend com-

mand, the device enters the Erase Suspend mode.

The system can read array data using the standard

read timings, except that if it reads at an address

within erase-suspended sectors, the device outputs

status data. After completing a programming opera-

tion in the Erase Suspend mode, the system may

once again read array data with the same exception.

See “Erase Suspend/Erase Resume Commands” for

more information on this mode.

The system must issue the reset command to re-en-

able the device for reading array data if DQ5 goes

high, or while in the autoselect mode. See the “Reset

Command” section, next.

See also “Requirements for Reading Array Data” in

the “Device Bus Operations” section for more informa-

tion. The Read Operations table provides the read

parameters, and Figure 13 shows the timing diagram.

Reset Command

Writing the reset command to the device resets the

device to reading array data. Address bits are don’t

care for this command.

The reset command may be written between the se-

quence cycles in an erase command sequence before

erasing begins. This resets the device to reading array

data. Once erasure begins, however, the device ig-

nores reset commands until the operation is complete.

The reset command may be written between the se-

quence cycles in a program command sequence

before programming begins. This resets the device to

reading array data (also applies to programming in

Erase Suspend mode). Once programming begins,

however, the device ignores reset commands until the

operation is complete.

The reset command may be written between the se-

quence cycles in an autoselect command sequence.

Once in the autoselect mode, the reset command

must be written to return to reading array data (also

applies to autoselect during Erase Suspend).

If DQ5 goes high during a program or erase operation,

writing the reset command returns the device to read-

ing array data (also applies during Erase Suspend).

Autoselect Command Sequence

The autoselect command sequence allows the host

system to access the manufacturer and devices

codes, and determine whether or not a sector is pro-

tect ed. Ta bl e 9 show s the address and data

requirements. This method is an alternative to that

shown in Table 4, which is intended for PROM pro-

grammers and requires VID on address bit A9.

The autoselect command sequence is initiated by writ-

ing two unlock cycles, followed by the autoselect

command. The device then enters the autoselect

mode, and the system may read at any address any

number of times, without initiating another command

sequence.

A read cycle at address XX00h retrieves the manufac-

turer code. A read cycle at address XX01h returns the

device code. A read cycle containing a sector address

(SA) and the address 02h in word mode (or 04h in

byte mode) returns 01h if that sector is protected, or

00h if it is unprotected. Refer to Tables 2 and 3 for

valid sector addresses.

The system must write the reset command to exit the

autoselect mode and return to reading array data.

Word/Byte Program Command Sequence

The system may program the device by word or byte,

depending on the state of the BYTE# pin. Program-

ming is a four-bus-cycle operation. The program

command sequence is initiated by writing two unlock

write cycles, followed by the program set-up com-

mand. The program address and data are written

next, which in turn initiate the Embedded Program al-

gorithm. The system is not required to provide further

controls or timings. The device automatically gener-

ates the program pulses and verifies the programmed

cell margin. Table 9 shows the address and data re-

quiremen t s f o r the b y te pro g r a m command

sequence.

When the Embedded Program algorithm is complete,

the device then returns to reading array data and ad-

dresses are no longer latched. The system can

determine the status of the program operation by

using DQ7, DQ6, or RY/BY#. See “Write Operation

Status” for information on these status bits.

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