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PSMN030-150P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza PSMN030-150P
Descripción Electrónicos  N-Channel MOSFET
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
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PSMN030-150P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISF1061
eq PSMN030-150P
N-Channel MOSFET
www.iscsemi.com
1
FEATURES
·Drain Current -ID= 55.5A@ TC=25℃
·Drain Source Voltage -VDSS= 150V(Min)
·Static Drain-Source On-Resistance
-RDS(on) = 30mΩ(Max)@VGS= 10V
APPLICATIONS
·
Switch Mode Power Supply (SMPS)
·
Uninterruptible Power Supply (UPS)
·
Power Factor Correction (PFC)
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
150
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
55.5
A
IDM
Drain Current-Single Pulse
222
A
PD
Total Dissipation @TC=25℃
250
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.6
℃
/W


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