1

Notes:

a. Package limited

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. The

is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

A

TC = 70 °C

TA = 25 °C

TA = 70 °C

Pulsed Drain Current

IDM

Continuous Source-Drain Diode Current

TC = 25 °C

IS

TA = 25 °C

Maximum Power Dissipation

TC = 25 °C

PD

W

TC = 70 °C

TA = 25 °C

TA = 70 °C

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

5 s

RthJA

°C/W

Steady State

5.8

PRODUCT SUMMARY

VDS (V)

D (A)

I

Pin 1

D

D

G

D

D

S

D

S

Pin 1

APPLICATIONS

•

DC/DC Converters in Computing,Servers,and POL

•

Isolated DC/DC Converters in Telecom and Industrial

Packaging Reduces Footprint Area

•

Ultra Small DFN2X2 Chipscale

•

DT-Trench Power MOSFET

FEATURES

Rev. 1.0

RDS(on) (m )

8.9

DTQ2421

P-Channel 40 V (D-S) Power MOSFET

-4

-40

-6

36 at VGS = -10 V

65 at VGS = -4.5 V

-

6a

-

4.8a

-3

a, b, c

-1.9b, c

-24

-6a

-3 b, c

7.6

4.8

1.9

b, c

1.2 b, c

45

35

S

G

D

P-Channel MOSFET