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ISF1053 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza ISF1053
Descripción Electrónicos  N-Channel MOSFET
PDF  5 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISF1053 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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ISF1053
N-Channel MOSFET
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
650
--
--
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2.5
--
4.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 15A
--
--
0.12
Ω
IDSS
Zero Gate Voltage Drain Current
VDS= 650V; VGS= 0
--
--
1
uA
IDSS
Zero Gate Voltage Drain Current
VDS= 650V; VGS= 0;
TJ = 150°C
--
--
100
uA
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
--
--
±
100
nA
Ciss
Input Capacitance
VGS = 0V,
VDS = 100V,
f = 1.0MHz
--
1953
--
pF
Coss
Output Capacitance
--
172
--
Crss
Reverse Transfer Capacitance
--
1.25
--
Qg
Total Gate Charge
VDD = 520V,
ID = 25A,
VGS = 10V
--
56
--
nC
Qgs
Gate-Source Charge
--
15.5
--
Qgd
Gate-Drain Charge
--
20.5
--
td(on)
Turn-on Delay Time
VDD = 300V,
ID = 25A,
RG = 25Ω,
--
55
--
ns
tr
Turn-on Rise Time
--
196
--
td(off)
Turn-off Delay Time
--
79
--
tf
Turn-off Fall Time
--
70
--
Drain - Source Body Diode Characteristics
VSD
Diode Forward Voltage
ISD= 15A; VGS= 0V
--
--
1.2
V
trr
Reverse Recovery Time
VDD = 400V,IF = IS,
diF/dt = 100A /μs
--
185
--
ns
Qrr
Reverse Recovery Charge
--
1.0
--
μC



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