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IXFR26N50 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFR26N50 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc N-Channel MOSFET Transistor IXFR26N50 www.iscsemi.com 2023.10.8 1 FEATURES ·Drain Current -ID= 26A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 200mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 26 A IDM Drain Current-Single Pluse 104 A PD Total Dissipation @TC=25℃ 250 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.50 ℃ /W |
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