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S8C5H30L Datasheet(PDF) 3 Page - STMicroelectronics |
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S8C5H30L Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() STS8C5H30L Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit N-channel P-channel VDS Drain-source voltage (vgs = 0) 30 V VGS Gate- source voltage ±16 ±16 V ID Drain current (continuos) at TC = 25°C single operating 84.2 A ID Drain current (continuos) at TC = 100°C single operating 6.4 3.1 A IDM (1) 1. Pulse width limited by safe operating area For the P-channel MOSFET actual polarity of voltages and current has to be reversed Drain current (pulsed) 32 16.8 A PTOT Total dissipation at TC = 25°C dual operating Total dissipation at TC = 25°C single operating 1.6 2 W W Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature 150 °C Table 2. Thermal data Rthj-a Thermal resistance junction-ambient single operating Thermal resistance junction-ambient dual operating 62.5 78 °C/W °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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