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IXFQ120N25 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFQ120N25 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc N-Channel MOSFET Transistor IXFQ120N25 www.iscsemi.com 2023-8-29 1 FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 12mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and PFC Circuits.. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Pluse 230 A PD Total Dissipation @TC=25℃ 520 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.42 ℃ /W |
Número de pieza similar - IXFQ120N25 |
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