DMN2120UFCL

Document number: DS40585 Rev. 3 - 2

2 of 7

www.diodes.com

July 2019

© Diodes Incorporated

DMN2120UFCL

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

ID

1.8

1.4

A

Pulsed Drain Current (380µs Pulse, 1% Duty Cycle) (Note 7)

IDM

10

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

0.7

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

PD

0.45

W

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)

RθJA

270

°C/W

Power Dissipation (Note 6)

PD

1.16

W

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)

RθJA

108

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

20

—

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

—

1.0

μA

VDS = 16V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±10

μA

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

0.3

—

1.0

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

57

100

m

Ω

VGS = 4.5V, ID = 3.6A

—

69

140

VGS = 2.5V, ID = 3.1A

—

74

200

VGS = 1.8V, ID = 1A

Diode Forward Voltage

VSD

—

0.7

1.2

V

VGS = 0V, IS = 1.6A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

130

—

pF

VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

26

—

pF

Reverse Transfer Capacitance

Crss

—

18

—

pF

Gate Resistance

Rg

—

2.7

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

1.4

—

nC

VDS = 10V, ID = 3.6A

Total Gate Charge (VGS = 10V)

Qg

—

2.8

—

nC

Gate-Source Charge

Qgs

—

0.1

—

nC

Gate-Drain Charge

Qgd

—

0.5

—

nC

Turn-On Delay Time

tD(ON)

—

0.6

—

ns

VDD = 10V, VGS = 4.5V,

ID = 1A, RG = 6Ω, RL = 10Ω

Turn-On Rise Time

tR

—

2.7

—

ns

Turn-Off Delay Time

tD(OFF)

—

4.2

—

ns

Turn-Off Fall Time

tF

—

1.7

—

ns

Body Diode Reverse Recovery Time

tRR

—

10

—

ns

IF = 4A, dI/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—

1.0

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Repetitive rating, pulse width limited by junction temperature.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.