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M25P10-AVMP3/X Datasheet(PDF) 37 Page - STMicroelectronics

No. de pieza M25P10-AVMP3/X
Descripción Electrónicos  1 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface
PDF  49 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M25P10-AVMP3/X Datasheet(HTML) 37 Page - STMicroelectronics

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M25P10-A
DC and AC parameters
37/49
Table 15.
DC Characteristics (Device Grade 3)
Symbol
Parameter
Test Condition (in addition to
those in Table 10)
Min(1)
1.
This is preliminary data.
Max(1)
Unit
ILI
Input Leakage Current
± 2
µA
ILO
Output Leakage Current
± 2
µA
ICC1
Standby Current
S = VCC, VIN = VSS or VCC
100
µA
ICC2
Deep Power-down Current
S = VCC, VIN = VSS or VCC
50
µA
ICC3
Operating Current (READ)
C = 0.1VCC / 0.9.VCC at 25MHz,
Q = open
8mA
C = 0.1VCC / 0.9.VCC at 20MHz,
Q = open
4mA
ICC4
Operating Current (PP)
S = VCC
15
mA
ICC5
Operating Current (WRSR)
S = VCC
15
mA
ICC6
Operating Current (SE)
S = VCC
15
mA
ICC7
Operating Current (BE)
S = VCC
15
mA
VIL
Input Low Voltage
– 0.5
0.3VCC
V
VIH
Input High Voltage
0.7VCC
VCC+0.4
V
VOL
Output Low Voltage
IOL = 1.6mA
0.4
V
VOH
Output High Voltage
IOH = –100µAVCC–0.2
V
Table 16.
Instruction Times (Device Grade 6)
Test conditions specified in Table 10 and Table 12
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
tW
Write Status Register Cycle Time
5
15
ms
tPP
(1)
1.
When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are
obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1
≤n ≤
256)
Page Program Cycle Time (256 Bytes)
1.4
5ms
Page Program Cycle Time (n Bytes)
0.4+
n*1/256
tSE
Sector Erase Cycle Time
0.8
3
s
tBE
Bulk Erase Cycle Time
2.5
6
s



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