STGWA60H65DFB datasheet(2/21 Pages) STMICROELECTRONICS

No. de pieza	STGWA60H65DFB

Descripción Electrónicos	Trench gate field-stop 650 V, 60 A high speed HB series IGBT

PDF	21 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

650

Continuous collector current at TC = 25 °C

80 (1)

Continuous collector current at TC = 100 °C

ICP (2)(3)

Pulsed collector current

240

VGE

Gate-emitter voltage

±20

Transient gate-emitter voltage (tP ≤ 10 μs)

±30

Continuous forward current at TC = 25 °C

80 (1)

Continuous forward current at TC = 100 °C

IFP (2)(3)

Pulsed forward current

240

PTOT

Total power dissipation at TC = 25 °C

375

TSTG

Storage temperature range

-55 to 150

°C

Operating junction temperature range

-55 to 175

°C

1. Current level is limited by bond wires.

2. Pulse width is limited by maximum junction temperature.

3. Defined by design, not subject to production test.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.4

°C/W

RthJC

Thermal resistance junction-case diode

1.14

°C/W

RthJA

Thermal resistance junction-ambient

°C/W

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB

Electrical ratings

DS9535 - Rev 8

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