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STGWA60H65DFB Datasheet(PDF) 6 Page - STMicroelectronics

No. de pieza STGWA60H65DFB
Descripción Electrónicos  Trench gate field-stop 650 V, 60 A high speed HB series IGBT
PDF  21 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA60H65DFB Datasheet(HTML) 6 Page - STMicroelectronics

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Figure 7. VCE(sat) vs collector current
VCE(sat)
1.4
1.2
0
20
IC(A)
(V)
40
60
80
2.2
2.0
1.8
1.6
VGE=15V
TJ=175°C
TJ=25°C
TJ=-40°C
2.4
100
GIPD270820131423FSR
Figure 8. Forward bias safe operating area
10
2
10
1
10 0
10
0
10
1
10
2
IC
(A)
VCE(V)
Tj≤175°C
Tc=25°C
VGE=15V
single pulse
1ms
10µs
1µs
100µs
GIPG300320151744ALS
Figure 9. Diode VF vs forward current
GIPG170415EWF7WDVF
2.8
2.4
2.0
1.6
1.2
0.8
20
40
60
80
100
VF
(V)
IF (A)
TJ =-40°C
TJ =25°C
TJ =175°C
Figure 10. Normalized V(BR)CES vs junction temperature
V(BR)CES
(norm)
1.1
1.0
0.9
-50
TJ(°C)
0
50
100
150
IC=2mA
GIPD280820131415FSR
Figure 11. Normalized VGE(th) vs junction temperature
VGE(th)
(norm)
0.8
0.7
0.6
-50
TJ(°C)
0
50
100
150
0.9
1.0
IC=1mA
GIPD280820131503FSR
Figure 12. Gate charge vs gate-emitter voltage
VGE
(V)
4
2
0
0
Qg(nC)
50 100 150 200
6
8
250 300 350
10
12
14
GIPD280820131507FSR
Vcc=520V, Ic=60A,
IG=1mA
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics (curves)
DS9535 - Rev 8
page 6/21



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