STC6NF30V datasheet(4/13 Pages) STMICROELECTRONICS

No. de pieza	STC6NF30V

Descripción Electrónicos	N-channel 30V - 0.020ohm - 6A - TSSOP8 2.5V-drive STripFE TM II Power MOSFET

PDF	13 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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4 / 13 page

Electrical characteristics

STC6NF30V

4/13

Electrical characteristics

(TJ = 25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±12V

±100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

0.6

RDS(on)

Static drain-source on

resistance

VGS= 4.5V, ID= 3A

VGS =2.5V, ID = 3A

0.020

0.025

0.030

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 10V, ID = 6A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f = 1 MHz,

VGS = 0

800

180

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD =15V, ID = 6A

VGS = 2.5V

Figure 16 on page 9

6.8

2.0

3.4

9nC

Table 5.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 15V, ID = 3A,

RG = 4.7Ω, VGS = 2.5V

Figure 14 on page 9

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