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STB85NF3LLT4 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB85NF3LLT4 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() STB85NF3LL Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VDGR Drain-gate voltage (RGS = 20KΩ)30 V VGS Gate-source voltage ± 16 V VGSM Gate-source voltage pulsed (tp ≤50µs; duty cycle 25%; TJ ≤150°C) ± 20 V ID Drain current (continuous) at TC = 25°C 85 A ID Drain current (continuous) at TC=100°C 60 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 340 A PTOT Total dissipation at TC = 25°C 110 W Derating factor 0.73 W/°C Tstg Storage temperature –65 to 175 °C TJ Max. Operating Junction Temperature 175 °C Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case Max 0.36 °C/W RthJA Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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