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MJ802 Datasheet(PDF) 2 Page - STMicroelectronics |
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MJ802 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.875 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 100 V VCB = 100 V Tcase = 150 oC 1 5 mA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 4 V 1 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 200 mA 90 V VCER(sus) ∗ Collector-emitter Sustaining Voltage (RBE = 100 Ω) IC = 200 mA 100 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 7.5 A IB = 0.75 A 0.8 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 7.5 A IB = 0.75 A 1.3 V VBE ∗ Base-Emitter Voltage IC = 7.5 A VCE = 2 V 1.3 V hFE ∗ DC Current Gain IC = 7.5 A VCE = 2 V 25 100 fT Transition Frequency IC = 1 A VCE = 10 V f = 1 MHz 2 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % MJ802 2/4 |
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