MJ802 datasheet(1/4 Pages) STMICROELECTRONICS

No. de pieza	MJ802

Descripción Electrónicos	SILICON NPN POWER TRANSISTOR

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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MJ802

SILICON NPN POWER TRANSISTOR

s

STMicroelectronics PREFERRED

SALESTYPE

DESCRIPTION

The MJ802 is a silicon Epitaxial-Base power

transistor mounted in Jedec TO-3 metal case. It

is intended for general purpose power amplifier

and switching applications.

®

October 2003

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCEO

Collector-emitter Voltage (IB = 0)

90

V

VCBO

Collector-base Voltage (IE = 0)

100

V

VEBO

Emitter-Base Voltage (IC = 0)

4

V

IC

Collector Current

30

A

IB

Base Current

7.5

A

Ptot

Total Dissipation at Tc

≤ 25 oC

200

W

Tstg

Storage Temperature

-65 to 200

oC

Tj

Max. Operating Junction Temperature

200

oC

1

2

TO-3

INTERNAL SCHEMATIC DIAGRAM

1/4

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MJ802 Datasheet(PDF) 1 Page - STMicroelectronics

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