RH40N25FSY3 datasheet(1/13 Pages) STMICROELECTRONICS

No. de pieza	RH40N25FSY3

Descripción Electrónicos	N-channel 250V - 0.084ohm - TO-254AA Rad-hard low gate charge STripFET TM Power MOSFET

PDF	13 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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PRELIMINARY DATA

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

March 2007

Rev 2

1/13

13

STRH40N25FSY3

N-channel 250V - 0.084

Ω - TO-254AA

Rad-hard low gate charge STripFET™ Power MOSFET

Features

■ Low RDS(on)

■ Fast switching

■ Single event effect (SEE) hardened

■ Low total gate charge

■ Light weight

■ 100% avalanche tested

■ Application oriented characterization

■ Hermetically sealed

■ Heavy ion SOA

■ 100kRad TID

■ SEL & SEGR with 34Mev/cm²/mg LET ions

Description

This Power MOSFET series realized with

STMicroelectronics unique STripFET process has

specifically been designed to improve immunity to

space effect. It is therefore suitable as power

switch in mainly high-efficiency DC-DC converters

and Motor Control applications. It is also intended

for any application with low gate charge drive

requirements.

Applications

■ Satellite

■ High reliability applications

Internal schematic diagram

Type

VDSS

STRH40N25FSY3

250V

TO-254AA

www.st.com

Order codes

Part number

Marking

Package

Packaging

STRH40N25FSY1(1)

1.

Mil temp range

RH40N25FSY1

TO-254AA

Individual strip pack

STRH40N25FSY3 (2)

2.

Space flights parts (full ESA flow screening)

RH40N25FSY3

TO-254AA

Individual strip pack

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RH40N25FSY3 Datasheet(PDF) 1 Page - STMicroelectronics

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