Nexperia

PSMN2R8-80SSF

NextPower 80 V, 2.8 mOhm, 190 Amp, N-channel MOSFET in LFPAK88 package

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Source-drain diode

Qr

recovered charge

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 40 V

-

47

-

nC

[1] Protected by 100% test

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

G

gate

2

S

Source

3

S

Source

4

S

Source

mb

D

mounting base; connected

to drain

1

2

3

4

LFPAK88 (SOT1235)

S

D

G

mbb076

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

PSMN2R8-80SSF

LFPAK88

plastic, single-ended surface-mounted package

(LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm

body

SOT1235

7. Marking

Table 4. Marking codes

Type number

Marking code

PSMN2R8-80SSF

X2F8S80S

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

25 °C ≤ Tj ≤ 175 °C

-

80

V

VDGR

drain-gate voltage

25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ

-

80

V

VGS

gate-source voltage

-20

20

V

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

341

W

VGS = 10 V; Tmb = 25 °C

-

190

A

ID

drain current

VGS = 10 V; Tmb = 100 °C

-

135

A

IDM

peak drain current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

760

A

Tstg

storage temperature

-55

175

°C

PSMN2R8-80SSF

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© Nexperia B.V. 2022. All rights reserved

Objective data sheet

23 June 2022

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