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B2D30120HC1 Datasheet(PDF) 1 Page - BASIC SEMICONDUCTOR

No. de pieza B2D30120HC1
Descripción Electrónicos  SiC Schottky Diode
PDF  7 Pages
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Fabricante Electrónico  BASICSEMI [BASIC SEMICONDUCTOR]
Página de inicio  https://www.basicsemi.com/
Logo BASICSEMI - BASIC SEMICONDUCTOR

B2D30120HC1 Datasheet(HTML) 1 Page - BASIC SEMICONDUCTOR

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backside
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B2D30120HC1
SiC Schottky Diode
V
RRM
1200 V
30 A**
178 nC**
I
F (TC=155°C)
Q
C
Package: TO-247-3
Product Summary
2
3
1
1 / 7
www.basicsemi.com
Electrical Connection
Features
Benefits
Low leakage current (I
R)
Zero reverse recovery current
Temperature independent switching behavior
Positive temperature coefficient on V
F
High surge current capacity
Low capacitive charge
System cost savings due to smaller magnetics
System efficiency improvement over Si diodes
Reduction of heat sink requirements
Switch mode power supplies (SMPS)
Uninterruptible power supplies
Server/telecom power supplies
Power factor correction
Solar
Enabling higher frequency
Reduced EMI
Applications
Pin1 - Anode
Pin2 and backside - Cathode
Pin3 - Anode
Package Pin Definitions
Package Parameters
Part Number
Marking
Package
B2D30120HC1
B2D30120HC1
TO-247-3
* Per Leg, ** Per Device
Rev. 1.2


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