NAND02G-B2C datasheet(43/62 Pages) STMICROELECTRONICS

No. de pieza	NAND02G-B2C

Descripción Electrónicos	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

PDF	62 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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NAND01G-B2B, NAND02G-B2C

DC And AC parameters

43/62

Figure 18.

Equivalent Testing Circuit for AC Characteristics Measurement

Table 22.

DC Characteristics, 1.8V Devices

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

IDD1

Operating

Current

Sequential

Read

tRLRL minimum

E=VIL, IOUT = 0 mA

-8

IDD2

Program

IDD3

Erase

IDD5

Standby Current (CMOS)(1)

E=VDD-0.2,

WP=0/VDD

µA

ILI

Input Leakage Current(1)

VIN= 0 to VDDmax

±10

µA

ILO

Output Leakage Current(1)

VOUT= 0 to VDDmax

±10

µA

VIH

Input High Voltage

VDD-0.4

VDD+0.3

VIL

Input Low Voltage

-0.3

0.4

VOH

Output High Voltage Level

IOH = -100µA

VDD-0.1

VOL

Output Low Voltage Level

IOL = 100µA

0.1

IOL (RB)

Output Low Current (RB)

VOL = 0.1V

VLKO

VDD Supply Voltage (Erase and

Program lockout)

1.1

Leakage current and standby current double in stacked devices

Ai11085

NAND Flash

2Rref

VDD

2Rref

GND

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