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NAND02G-B2C Datasheet(PDF) 56 Page - STMicroelectronics |
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NAND02G-B2C Datasheet(HTML) 56 Page - STMicroelectronics |
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56 / 62 page ![]() DC And AC parameters NAND01G-B2B, NAND02G-B2C 56/62 Figure 33. Resistor value versus waveform timings for Ready/Busy signal 1. T = 25°C. 11.2 Data Protection The ST NAND device is designed to guarantee Data Protection during Power Transitions. A VDD detection circuit disables all NAND operations, if VDD is below the VLKO threshold. In the VDD range from VLKO to the lower limit of nominal range, the WP pin should be kept low (VIL) to guarantee hardware protection during power transitions as shown in the below figure. Figure 34. Data Protection ai07565B RP (KΩ) 12 3 4 100 300 200 1 2 3 1.7 0.85 30 1.7 1.7 1.7 1.7 tr tf ibusy 0 400 4 RP (KΩ) 12 3 4 100 300 200 1 2 3 2.4 1.2 0.8 0.6 100 200 300 400 3.6 3.6 3.6 3.6 0 400 4 VDD = 1.8V, CL = 30pF VDD = 3.3V, CL = 100pF 60 90 120 0.57 0.43 Ai11086 VLKO VDD W Nominal Range Locked Locked |
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