Nexperia

PIMP31

50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 1 kΩ, R2 = 10 kΩ

Tamb (°C)

- 75

175

125

25

75

- 25

006aab531

200

300

100

400

500

Ptot

(mW)

0

FR4 PCB, single-sided, 35 µm copper, tin-plated and standard footprint

Fig. 1. Per device: Power derating curve

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

-

-

432

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

-

-

105

K/W

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

-

-

298

K/W

[1] Device mounted on an FR4 PCB, single-sided, 35 µm copper, tin-plated and standard footprint.

006aaa494

10- 5

10

10- 2

10- 4

102

10- 1

tp (s)

10- 3

103

1

102

10

103

Zth(j-a)

(K/W)

1

0.10

0.05

0.02

0.01

0

δ = 1

0.75

0.50

0.33

0.20

FR4 PCB, single-sided, 35µm copper, tin-plated and standard footprint

Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

PIMP31

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Product data sheet

16 February 2022

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