BLY89C datasheet(4/11 Pages) PHILIPS

No. de pieza	BLY89C

Descripción Electrónicos	VHF power transistor

PDF	11 Pages

Scroll/Zoom	100%

Fabricante Electrónico	PHILIPS [NXP Semiconductors]

Página de inicio	http://www.nxp.com

Logo

4 / 11 page

August 1986

Philips Semiconductors

Product speciﬁcation

VHF power transistor

BLY89C

CHARACTERISTICS

Tj =25 °C

Note

1. Measured under pulse conditions: tp ≤ 200 µs; δ≤ 0,02.

Breakdown voltage

Collector-emitter voltage

VBE =0;IC =25mA

V(BR)CES

36 V

Collector-emitter voltage

open base; IC =50mA

V(BR)CEO

18 V

Emitter-base voltage

open collector; IE =10mA

V(BR)EBO

Collector cut-off current

VBE = 0; VCE =18V

ICES

10 mA

Transient energy

L = 25 mH; f = 50 Hz

open base

8ms

−VBE = 1,5 V; RBE =33 Ω

8ms

D.C. current gain(1)

IC = 2,5 A; VCE =5V

hFE

typ

10 to 80

Collector-emitter saturation voltage(1)

IC = 7,5 A; IB = 1,5 A

VCEsat

typ

1,7 V

Transition frequency at f = 100 MHz(1)

IC = 2,5 A; VCE = 13,5 V

typ

800 MHz

IC = 7,5 A; VCE = 13,5 V

typ

750 MHz

Collector capacitance at f = 1 MHz

IE =Ie = 0; VCB =15V

typ

65 pF

90 pF

Feedback capacitance at f = 1 MHz

IC = 100 mA; VCE =15V

Cre

typ

41 pF

Collector-stud capacitance

Ccs

typ

2 pF

BLY89C Datasheet(PDF) 4 Page - NXP Semiconductors

BLY89C Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Descarga

Enlace URL