August 1986

2

Philips Semiconductors

Product specification

VHF power transistor

BLY89C

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-A,

B and C operated mobile, industrial

and military transmitters with a

nominal supply voltage of 13,5 V. The

transistor is resistance stabilized and

is guaranteed to withstand severe

load mismatch conditions with a

supply over-voltage to 16,5 V. It has a

3/8" capstan envelope with a ceramic

cap. All leads are isolated from the

stud.

QUICK REFERENCE DATA

MODE OF OPERATION

V

f

MHz

W

dB

η

%

Ω

mS

c.w.

13,5

175

25

>6

>70

1,6

+ j1,4

210

+ j5,5

PIN CONFIGURATION

handbook, halfpage

e

c

b

MBB012

Fig.1 Simplified outline and symbol.

halfpage

MSB056

2

3

1

4

PINNING - SOT120

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.