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BGY282 Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BGY282
Descripción Electrónicos  dual band UHF amplifier module for GSM900 and GSM1800
PDF  12 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BGY282 Datasheet(HTML) 2 Page - NXP Semiconductors

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2001 Dec 04
2
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
FEATURES
• Dual band GSM amplifier
• 3.5 V nominal supply voltage
• 33 dBm output power for GSM1800
• 35 dBm output power for GSM900
• Easy output power control by DC voltage
• Internal input and output matching
• Easy band selection by DC voltage
• Suited for GPRS class 12 (duty cycle 4 : 8).
APPLICATIONS
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in two
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.
DESCRIPTION
The BGY282 is a power amplifier module in a SOT632A
surface mounted ceramic package with a plastic cap.
The module consists of two separated line-ups, one for
GSM900 and one for GSM1800 with internal power
control, input and output matching.
PINNING - SOT632A
PIN
DESCRIPTION
1
RF input 1 (GSM900)
2VAPC
3, 6, 9, 12
Ground
4VS1 (GSM900)
5
RF output 1 (GSM900)
7
RF output 2 (GSM1800)
8VS2 (GSM1800)
10
Vband
11
RF input 2 (GSM1800)
5
12
4
3
7
6
12
11
Bottom view
MBL253
10
8
9
Fig.1 Simplified outline
QUICK REFERENCE DATA
RF performance at Tmb =25 °C.
MODE OF
OPERATION
f
(MHz)
VS
(V)
VAPC
(V)
PL
(dBm)
η
(%)
ZS, ZL
(
Ω)
Pulsed;
δ =1:8
880 to 915
3.5
≤2.2
typ. 35
50
50
1710 to 1785
3.5
≤2.2
typ. 33
45
50



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