BGY282 datasheet(5/12 Pages) PHILIPS

5 / 12 page

2001 Dec 04

Philips Semiconductors

Preliminary specification

dual band UHF amplifier module for GSM900 and GSM1800

BGY282

noise power GSM900

PL1 ≤ 34 dBm; bandwidth = 100 kHz;

f = 925 MHz

−−

−71

dBm

PL1 ≤ 34 dBm; bandwidth = 100 kHz;

f = 935 MHz

−−

−80

dBm

noise power GSM1800

PL2 ≤ 32 dBm; bandwidth = 100 kHz;

f = 1805 MHz

−−

−76

dBm

AM/PM conversion

PD1,2 = −0.5to0.5 dBm;

PL1 = 5 to 34 dBm; PL2 =0to 32 dBm;

PL1,2 = constant during measurement

−−

deg/dB

AM/AM conversion

PD1,2 = 4 %; f = 100 kHz;

PL1 = 5 to 34.7 dBm;

PL2 = 0 to 32.3 dBm

−−

conversion gain GSM900

PD1 =0dBm @ 915MHz;

PL1 =34dBm;

Pi1 = −50 dBm @ 905 MHz;

CG = P925 − Pi1

−

conversion gain GSM1800

PD2 = 0 dBm @ 1785 MHz;

PL2 =32dBm;

Pi2 = −50 dBm @ 1765 MHz;

CG = P1805 − Pi2

−

3 dB control bandwidth

GSM900, GSM1800

PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm

0.5

−−

MHz

power drop 4 slot burst

GSM900, GSM1800

VAPC = 2.2 V; difference PL with

δ = 1 : 8 and δ =4:8

−−

0.4

ruggedness

VS1,2 =5V; PD1 =0to3dBm;

PD2 = 0 to 5 dBm; PL1 =<35 dBm;

PL2 = <33 dBm; VSWR ≤6 : 1 through

all phases

no degradation

VS1,2 = 4.2 V; PD1 = 0 to 3 dBm;

PD2 = 0 to 5 dBm; PL1 =<35 dBm;

PL2 = <33 dBm; VSWR ≤10 : 1

through all phases

no degradation

VS1,2 = 4.2 V; PD1 = 0 to 3 dBm;

PD2 = 0 to 5 dBm PL1 = <34 dBm;

PL2 = <32 dBm; VSWR ≤6 : 1 through

all phases;

δ =4 :8

no degradation

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

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