IXTP05N100 datasheet(4/4 Pages) IXYS

No. de pieza	IXTP05N100

Descripción Electrónicos	High Voltage MOSFET

PDF	4 Pages

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Fabricante Electrónico	IXYS [IXYS Corporation]

Página de inicio	http://www.ixys.com

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4 / 4 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 05N100

IXTP 05N100

Fig. 11. Capacitance

100

1000

VD S - Volts

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

789

Q G - nanoCoulombs

VDS = 500V

ID = 1A

IG = 1mA

Fig. 7. Input Adm ittance

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

3.54.0

4.55.0

5.56.0

VG S - Volts

TJ = 125ºC

25ºC

-40ºC

Fig. 8. Transconductance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.0

0.2

0.4

0.6

0.8

1.0

I D - Amperes

TJ = -40ºC

25ºC

125ºC

Fig. 9. Source Current vs.

Source-To-Drain Voltage

0.0

0.5

1.0

1.5

2.0

2.5

0.4

0.5

0.6

0.7

0.8

0.9

VS D - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 12. Maxim um Transient Therm al

Resistance

0.1

1.0

10.0

100

1000

Pulse Width - milliseconds

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