DMT616MLSS

Document number: DS41501 Rev. 2 - 2

2 of 7

www.diodes.com

March 2019

© Diodes Incorporated

DMT616MLSS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

TA = +25°C

TA = +70°C

ID

10

8

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

70

A

Maximum Continuous Body Diode Forward Current

IS

10

A

Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)

ISM

70

A

Avalanche Current, L = 0.1mH

IAS

15.7

A

Avalanche Energy, L = 0.1mH

EAS

12.3

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

1.39

W

Thermal Resistance, Junction to Ambient (Note 5)

RϴJA

90.1

°C/W

Total Power Dissipation (Note 6)

PD

2.06

W

Thermal Resistance, Junction to Ambient (Note 6)

RϴJA

60.7

°C/W

Thermal Resistance, Junction to Case (Note 6)

RϴJC

8.7

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60

—

—

V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS = 48V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1.2

—

2.2

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

10.9

14

m

Ω

VGS = 10V, ID = 8.5A

—

15.8

21

VGS = 4.5V, ID = 6A

Diode Forward Voltage

VSD

—

0.7

1.2

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

785

—

pF

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

281

—

Reverse Transfer Capacitance

Crss

—

27

—

Gate Resistance

Rg

—

1.5

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

7.3

—

nC



VDS = 30V, ID = 10A

Total Gate Charge (VGS = 10V)

Qg

—

13.6

—

Gate-Source Charge

Qgs

—

2.2

—

Gate-Drain Charge

Qgd

—

3.4

—

Turn-On Delay Time

tD(ON)

—

3.2

—

ns

VGS = 10V, VDS = 30V,

RG = 6Ω, ID = 10A

Turn-On Rise Time

tR

—

4.4

—

Turn-Off Delay Time

tD(OFF)

—

14.7

—

Turn-Off Fall Time

tF

—

8.5

—

Reverse Recovery Time

tRR

—

23.0

—

ns

IF = 10A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

14.1

—

nC

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.