DMP4026LSD

Document number: DS44830 Rev. 2 - 2

2 of 7

www.diodes.com

March 2023

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DMP4026LSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-40

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

ID

-6.5

-5.2

A

Maximum Body Diode Forward Current (Note 6)

IS

-6.5

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

-46

A

Pulsed Body Diode Forward Current (10

μs Pulse, Duty Cycle = 1%)

ISM

-46

A

Avalanche Current

, L = 0.3mH

IAS

-20

A

Avalanche Energy

, L = 0.3mH

EAS

62

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

1.3

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

96.4

°C/W

Total Power Dissipation (Note 6)

PD

1.7

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

73.1

°C/W

Thermal Resistance, Junction to Case

RθJC

10.9

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

-40





V

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS





-1.0



μA

VDS = -40V, VGS = 0V

Gate-Source Leakage

IGSS





100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

-0.8



-1.8

V

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS(ON)



15.1

25

m

Ω

VGS = -10V, ID = -3A



18.3

45

VGS = -4.5V, ID = -3A

Diode Forward Voltage

VSD



-0.7

-1.0

V

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

CISS



2064



pF

VDS = -20V, VGS = 0V

f = 1.0MHz

Output Capacitance

COSS



212



Reverse Transfer Capacitance

CRSS



183



Gate Resistance

RG



2.5



Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = -10V)

QG



45.8



nC



VDS = -20V, ID = -3A

Total Gate Charge (VGS = -4.5V)

QG



23.5



Gate-Source Charge

QGS



5



Gate-Drain Charge

QGD



6.7



Turn-On Delay Time

tD(ON)



4.3



ns

VGS = -10V, VDD = -20V, RG = 6Ω,

ID = -3A

Turn-On Rise Time

tR



4.7



Turn-Off Delay Time

tD(OFF)



71.8



Turn-Off Fall Time

tF



23.9



Body Diode Reverse Recovery Time

tRR



17.3



ns

IS = -3A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR



8.7



nC

IS = -3A, di/dt = 100A/µs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.