DMN3012LEG

Document number: DS41633 Rev. 2 - 2

3 of 10

www.diodes.com

March 2019

© Diodes Incorporated

DMN3012LEG

Electrical Characteristics Q2 (@TA = +25°C, unless otherwise specified.)

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Typical Circuit

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

30

—

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

—

1.0

μA

VDS = 20V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±10V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

0.75

—

1.15

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

5.2

6

m

Ω

VGS = 5V, ID = 15A

Diode Forward Voltage

VSD

—

—

1.0

V

VGS = 0V, IS = 15A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

1137

1480

pF

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

620

810

pF

Reverse Transfer Capacitance

Crss

—

24

32

pF

Gate Resistance

Rg

—

0.54

1.1

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

9.7

12.6

nC

VDS = 15V, ID = 15A

Total Gate Charge at VTH

Qg(TH)

—

0.96

—

nC

Gate-Source Charge

Qgs

—

1.7

—

nC

Gate-Drain Charge

Qgd

—

1.2

—

nC

Turn-On Delay Time

tD(ON)

—

4.4

6.6

ns

VDD = 15V, VGS = 4.5V,

ID = 15A, Rg = 2Ω

Turn-On Rise Time

tR

—

3.5

—

ns

Turn-Off Delay Time

tD(OFF)

—

12.4

18.6

ns

Turn-Off Fall Time

tF

—

2.9

—

ns

Reverse Recovery Time

tRR

—

30.5

—

ns

IF = 15A, di/dt = 300A/μs

Reverse Recovery Charge

QRR

—

10.8

—

nC