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DMHT10H032LFJ Datasheet(PDF) 4 Page - Diodes Incorporated

No. de pieza DMHT10H032LFJ
Descripción Electrónicos  100V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE
PDF  7 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMHT10H032LFJ Datasheet(HTML) 4 Page - Diodes Incorporated

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DMHT10H032LFJ
Document number: DS42506 Rev. 2 - 2
4 of 7
www.diodes.com
June 2020
© Diodes Incorporated
DMHT10H032LFJ
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
J = 125℃
T
J = 85℃
T
J = 25℃
T
J = -55℃
V
GS = 0V
T
J = 150℃
0
2
4
6
8
10
0
2
4
6
8
10
12
14
Qg (nC)
Figure 11. Gate Charge
V
DS = 50V, ID = 6A
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
P
W =10s
P
W =10ms
P
W =100µs
DC
R
DS(ON)
Limited
P
W =1ms
P
W =100ms
T
J(Max) = 150℃
T
C = 25℃
Single Pulse
DUT on 1*MRP Board
V
GS = 10V
P
W =1s
1
10
100
1000
10000
0
20
40
60
80
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
C
rss
C
oss
C
iss
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
V
GS = 10V, ID = 6.0A
V
GS = 4.5V, ID = 4.0A
0.8
1.1
1.4
1.7
2
2.3
2.6
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = 250μA
I
D = 1mA



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