1996 Oct 08

3

Philips Semiconductors

Product specification

NPN wideband differential transistor

BFE520

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL CHARACTERISTICS

Note to the Limiting values and Thermal characteristics

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Any single transistor

collector-base voltage

open emitter

−

20

V

collector-emitter voltage

open base

−

8V

emitter-base voltage

open collector

−

2.5

V

DC collector current

−

70

mA

total power dissipation

−

1W

storage temperature

−65

+175

°C

junction temperature

−

175

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction

to soldering point; note 1

single loaded

230

K/W

double loaded

115

K/W