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BFE520 Datasheet(PDF) 5 Page - NXP Semiconductors

No. de pieza BFE520
Descripción Electrónicos  NPN wideband differential transistor
PDF  8 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFE520 Datasheet(HTML) 5 Page - NXP Semiconductors

  BFE520 Datasheet HTML 1Page - NXP Semiconductors BFE520 Datasheet HTML 2Page - NXP Semiconductors BFE520 Datasheet HTML 3Page - NXP Semiconductors BFE520 Datasheet HTML 4Page - NXP Semiconductors BFE520 Datasheet HTML 5Page - NXP Semiconductors BFE520 Datasheet HTML 6Page - NXP Semiconductors BFE520 Datasheet HTML 7Page - NXP Semiconductors BFE520 Datasheet HTML 8Page - NXP Semiconductors  
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1996 Oct 08
5
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
APPLICATION INFORMATION
SPICE parameters for any single BFE520 die
Note
1. These parameters have not been extracted, the
default values are shown.
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
1.016
fA
2
BF
220.1
−
3
NF
1.000
−
4
VAF
48.06
V
5
IKF
510.0
mA
6
ISE
283.0
fA
7
NE
2.035
−
8
BR
100.7
−
9
NR
0.988
−
10
VAR
1.692
V
11
IKR
2.352
mA
12
ISC
24.48
aA
13
NC
1.022
−
14
RB
10.00
Ω
15
IRB
1.000
µA
16
RBM
10.00
Ω
17
RE
775.3
m
Ω
18
RC
2.210
Ω
19(1)
XTB
0.000
−
20(1)
EG
1.110
eV
21(1)
XTI
3.000
−
22
CJE
1.245
pF
23
VJE
600.0
mV
24
MJE
0.258
−
25
TF
8.616
ps
26
XTF
6.788
−
27
VTF
1.414
V
28
ITF
110.3
mA
29
PTF
45.01
deg
30
CJC
447.6
fF
31
VJC
189.2
mV
32
MJC
0.071
−
33
XCJC
0.130
−
34
TR
543.7
ps
35(1)
CJS
0.000
F
36(1)
VJS
750.0
mV
37(1)
MJS
0.000
−
38
FC
0.780
−
Fig.2
Package equivalent circuit SOT353B
(inductance only).
handbook, halfpage
B1
B2
C1
C2
LB
LB
MBG190
LP
LP
T1
T2
LE
E
LE
LP
Fig.3
Package capacitance (fF) between
indicated nodes.
35
E
B2
C2
C1
3.5
35
2
0.4
0.8
0.6
LP
Lead inductances (nH)
LB
LE
35
36
35
2
36
15
B1
E
B2
C2
MBG191



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