APT50-101DN datasheet(1/2 Pages) ISC

No. de pieza	APT50-101DN

Descripción Electrónicos	isc N-Channel MOSFET Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

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isc N-Channel MOSFET Transistor

APT50-101DN

DESCRIPTION

·

Drain Current :ID= 22.5A@ TC=25℃

·

Drain Source Voltage

: VDSS= 500V(Min)

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

high voltage, high speed power switching

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

500

V

VGS

Gate-Source Voltage

±

30

V

ID

Drain Current-continuous@ TC=25℃

22.5

A

IDM

Drain Current-Single Pluse

90

A

Ptot

Total Dissipation@TC=25℃

295

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.42

℃

/W

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APT50-101DN Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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