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BAS321 Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BAS321
Descripción Electrónicos  General purpose diode
PDF  12 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS321 Datasheet(HTML) 3 Page - NXP Semiconductors

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1999 Feb 09
3
Philips Semiconductors
Product specification
General purpose diode
BAS321
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1. Soldering point of cathode tab.
2. Device mounted on an FR4 printed circuit board.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
see Fig. 3
IF = 100 mA
1
V
IF = 200 mA
1.25
V
IR
reverse current
see Fig. 5
VR = 200 V
100
nA
VR = 200 V; Tj = 150 °C
100
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig. 6
2
pF
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured at
IR = 3 mA; see Fig.8
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering
point
Ts =90°C; note 1
130
K/W
Rth j-a
thermal resistance from junction to ambient
note 2
366
K/W



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