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BAS321 Datasheet(PDF) 6 Page - NXP Semiconductors

No. de pieza BAS321
Descripción Electrónicos  General purpose diode
PDF  12 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS321 Datasheet(HTML) 6 Page - NXP Semiconductors

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1999 Feb 09
6
Philips Semiconductors
Product specification
General purpose diode
BAS321
Fig.8 Reverse recovery time and waveforms.
(1) IR =3mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time tr = 0.35 ns;
Circuit capacitance C
≤ 1 pF (oscilloscope input + parasitic capacitance)
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V
I x R
RF
S
R = 50
S
Ω
IF
D.U.T.
R = 50
i
Ω
SAMPLING
OSCILLOSCOPE
MGA881



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