1999 May 31

3

NXP Semiconductors

Product data sheet

PNP general purpose transistor

2PB710A

THERMAL CHARACTERISTICS

Note

1.

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1.

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −60 V

−

−10

nA

IE = 0; VCB = −60 V; Tj = 150 °C

−

−5

μA

IEBO

emitter cut-off current

IC = 0; VEB = −5 V

−

−10

nA

hFE

DC current gain

IC = −150 mA; VCE = −10 V; note 1

2PB710AQ

85

170

2PB710AR

120

240

2PB710AS

170

340

DC current gain

IC = −500 mA; VCE = −10 V; note 1

40

−

VCEsat

collector-emitter saturation voltage IC = −300 mA; IB = −30 mA; note 1

−

−600

mV

VBEsat

base-emitter saturation voltage

IC = −300 mA; IB = −30 mA; note 1

−

−1.5

V

Cc

collector capacitance

IE = ie = 0; VCB = −10 V; f = 1 MHz

−

15

pF

fT

transition frequency

IC = −50 mA; VCE = −10 V;

f = 100 MHz; note 1

2PB710AQ

100

−

MHz

2PB710AR

120

−

MHz

2PB710AS

140

−

MHz