2PB710AS datasheet(3/7 Pages) NEXPERIA

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1999 May 31

NXP Semiconductors

Product data sheet

PNP general purpose transistor

2PB710A

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 50 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

PNP transistor in an SC-59 plastic package.

NPN complement: 2PD602A.

MARKING

PINNING

TYPE NUMBER

MARKING CODE

2PB710AQ

2PB710AR

2PB710AS

DESCRIPTION

base

emitter

collector

Fig.1 Simplified outline (SC-59) and symbol.

handbook, halfpage

MAM322

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

−60

VCEO

collector-emitter voltage

open base

−

−50

VEBO

emitter-base voltage

open collector

−

−5

collector current (DC)

−

−500

ICM

peak collector current

−

−1

IBM

peak base current

−

−200

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

250

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

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