MMDF3N06VLR2 datasheet(1/4 Pages) ONSEMI

No. de pieza	MMDF3N06VLR2

Descripción Electrónicos	Power MOSFET 3 Amps, 60 Volts N?묬hannel SO??, Dual

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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1 / 4 page

April, 2004 − Rev. 2

1

Publication Order Number:

MMDF3N06VL/D

MMDF3N06VL

Power MOSFET

3 Amps, 60 Volts

N−Channel SO−8, Dual

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls, these devices

are particularly well suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer additional

safety margin against unexpected voltage transients.

Features

• On−resistance Area Product about One−half that of Standard

MOSFETs with New Low Voltage, Low RDS(on) Technology

• Faster Switching than E−FETt Predecessors

• Avalanche Energy Specified

• I

DSS and VDS(on) Specified at Elevated Temperature

• Static Parameters are the Same for both TMOS V and TMOS E−FET

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Mounting Information for SO−8 Package Provided

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

60

Vdc

Drain−to−Gate Voltage, (RGS = 1 MΩ)

VDGR

60

Vdc

Gate−to−Source Voltage − Continuous

VGS

± 15

Vdc

Drain Current − Continuous @ TA = 25°C

Drain Current − Continuous @ TA = 100°C

Drain Current − Single Pulse (tp ≤ 10 ms)

ID

IDM

3.3

0.7

10

Adc

Apk

Total Power Dissipation @ TA = 25°C

(Note 1)

PD

2.0

W

Operating and Storage Temperature Range

TJ, Tstg

− 55 to

150

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak

IL = 3.3 Apk, L = 10 mH, RG = 25 Ω)

EAS

54

mJ

Thermal Resistance, Junction to Ambient

(Note 1)

RθJA

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, 0.0625

″ from case for 10

seconds

TL

260

°C

1

Mounted on G10/FR4 glass epoxy board using minimum recommended

footprint.

Source−1

1

2

3

4

8

7

6

5

Top View

Gate−1

Source−2

Gate−2

Drain−1

Drain−2

Device

Package

Shipping†

ORDERING INFORMATION

MMDF3N06VLR2

SO−8

2500 Tape & Reel

SO−8

CASE 751

STYLE 11

N−Channel

MARKING

DIAGRAM

D

S

G

PIN ASSIGNMENT

http://onsemi.com

VDSS

RDS(ON) TYP

ID MAX

60 V

130 m

Ω

3.0 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1

8

3N06V

ALYW

1

8

A

= Assembly Location

L

= Wafer Lot

Y

= Year

W

= Work Week

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