N1N20 datasheet(3/12 Pages) STMICROELECTRONICS

No. de pieza	N1N20

Descripción Electrónicos	N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET

PDF	12 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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STN1N20

Electrical ratings

Doc ID 6772 Rev 3

3/12

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS =0)

200

VGS

Gate-source voltage

± 20

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

0.6

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

2.9

Derating factor

0.023

W/°C

dv/dt

Peak diode recovery voltage slope

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-pcb

Thermal resistance junction-pcb max

°C/W

Rthj-amb

Thermal resistance junction-ambient max

°C/W

Maximum lead temperature for soldering purpose

260

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)

EAS

Single pulse avalanche energy (1)

Starting Tj = 25 °C, ID = IAR, VDD = 50 V

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