LSF0102DDFR datasheet(7/57 Pages) TI

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature (unless otherwise noted)(1)

MIN

MAX

UNIT

Input voltage(2)

–0.5

VI/O

Input/output voltage(2)

–0.5

Continuous channel current

128

IIK

Input clamp current

VI < 0

–50

Junction Temperature

150

°C

Tstg

Storage temperature range

–65

150

°C

(1)

Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating

conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The input and input/output negative-voltage ratings may be exceeded if the input and input/output clamp-current ratings are observed.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 500-V HBM is possible with the necessary precautions.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 250-V CDM is possible with the necessary precautions.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VI/O

Input/output voltage

Vref_A/B/EN

Reference voltage

IPASS

Pass transistor current

Operating free-air temperature

–40

125

°C

6.4 Thermal Information

THERMAL METRIC(1)

LSF0101

UNIT

DTQ (X2SON)

DRY (SON)

6 PINS

RθJA

Junction-to-ambient thermal resistance

294.4

407.0

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

188.9

285.2

°C/W

RθJB

Junction-to-board thermal resistance

216.8

271.6

°C/W

ψJT

Junction-to-top characterization parameter

26.5

113.5

°C/W

ψJB

Junction-to-board characterization parameter

216.0

271.0

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

n/a

°C/W

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LSF0108

SDLS966L – DECEMBER 2013 – REVISED DECEMBER 2022

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