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APTM50HM35F Datasheet(PDF) 2 Page - Advanced Power Technology

No. de pieza APTM50HM35F
Descripción Electrónicos  Full - Bridge MOSFET Power Module
PDF  6 Pages
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Fabricante Electrónico  ADPOW [Advanced Power Technology]
Página de inicio  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APTM50HM35F Datasheet(HTML) 2 Page - Advanced Power Technology

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APTM50HM35F
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 375µA
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
375
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
1500
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 49.5A
35
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14
Coss
Output Capacitance
2.8
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.18
nF
Qg
Total gate Charge
280
Qgs
Gate – Source Charge
80
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 99A
140
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
38
Td(off)
Turn-off Delay Time
75
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 99A
RG = 1
W
93
ns
Eon
Turn-on Switching Energy
u
2070
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 99A, RG = 1Ω
1690
µJ
Eon
Turn-on Switching Energy
u
3112
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 99A, RG = 1Ω
2026
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
99
IS
Continuous Source current
(Body diode)
Tc = 80°C
74
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 99A
1.3
V
dv/dt
Peak Diode Recovery
w
15
V/ns
Tj = 25°C
270
trr
Reverse Recovery Time
IS = - 99A
VR = 250V
diS/dt = 200A/µs
Tj = 125°C
540
ns
Tj = 25°C
5.2
Qrr
Reverse Recovery Charge
IS = - 99A
VR = 250V
diS/dt = 200A/µs
Tj = 125°C
19.2
µC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS
£ - 99A
di/dt
£ 700A/µs
VR
£ VDSS
Tj
£ 150°C



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